Simulation of pulsed ELF magnetic fields generated by GSM mobile phone handsets for human electromagnetic bioeffects research.

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dc.contributor.authorPerentos, N
dc.contributor.authorIskra, S
dc.contributor.authorMcKenzie, R J
dc.contributor.authorCosi, I
dc.date.accessioned2020-02-07T13:28:36Z
dc.date.available2020-02-07T13:28:36Z
dc.date.issued2008-10-24
dc.description.abstractHuman provocation studies that investigate the effects of Global System for Mobiles GSM communication systems on the brain have focused on Radio Frequency RF exposure We wish to further extend such study by investigating the effect of both RF and Extremely Low Frequency ELF field exposure the latter generated by the GSM handset s battery switching The use of a commercial handset as an exposure source for such investigations is problematic for a number of reasons and therefore a simulated exposure source capable of producing both RF and ELF components of exposure is desirable As a first step in developing such a source we have quantified and characterized the ELF field from several commercial handsets the RF characteristics being already well understood Through experimental measurement we deduce that these fields can be sufficiently simulated by a 9 mm radius loop residing 10 mm beneath the front surface of the handset device and carrying enough current to generate peak fields of 25 microT at the surface of the handset
dc.identifier.urihttp://dx.doi.org/Not available
dc.identifier.urihttps://lib.digitalsquare.io/xmlui/handle/123456789/14234
dc.relation.uriAustralasian physical And engineering sciences in medicine / supported by the Australasian College of Physical Scientists in Medicine and the Australasian Association of Physical Sciences in Medicine
dc.titleSimulation of pulsed ELF magnetic fields generated by GSM mobile phone handsets for human electromagnetic bioeffects research.en
dcterms.abstractHuman provocation studies that investigate the effects of Global System for Mobiles GSM communication systems on the brain have focused on Radio Frequency RF exposure We wish to further extend such study by investigating the effect of both RF and Extremely Low Frequency ELF field exposure the latter generated by the GSM handset s battery switching The use of a commercial handset as an exposure source for such investigations is problematic for a number of reasons and therefore a simulated exposure source capable of producing both RF and ELF components of exposure is desirable As a first step in developing such a source we have quantified and characterized the ELF field from several commercial handsets the RF characteristics being already well understood Through experimental measurement we deduce that these fields can be sufficiently simulated by a 9 mm radius loop residing 10 mm beneath the front surface of the handset device and carrying enough current to generate peak fields of 25 microT at the surface of the handset
dcterms.contributorPerentos, N
dcterms.contributorIskra, S
dcterms.contributorMcKenzie, R J
dcterms.contributorCosi, I
dcterms.identifierhttp://dx.doi.org/Not available
dcterms.relationAustralasian physical And engineering sciences in medicine / supported by the Australasian College of Physical Scientists in Medicine and the Australasian Association of Physical Sciences in Medicine
dcterms.titleSimulation of pulsed ELF magnetic fields generated by GSM mobile phone handsets for human electromagnetic bioeffects research.en
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